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Type Designator: STD11N65M2
SMD Transistor Code: 11N65M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 85 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 12.5 nC
Rise Time (tr): 7.5 nS
Drain-Source Capacitance (Cd): 20 pF
Maximum Drain-Source On-State Resistance (Rds): 0.67 Ohm
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